Transition metal oxides as charge injecting layer for admittance spectroscopy

被引：54

作者：

Hoping, M. ^{[1
]}

Schildknecht, C. ^{[2
]}

Gargouri, H. ^{[1
]}

Riedl, T. ^{[1
]}

Tilgner, M. ^{[1
]}

Johannes, H. -H. ^{[1
]}

Kowalsky, W. ^{[1
]}

机构：

[1] Tech Univ Carolo Wilhelmina Braunschweig, Inst Hochfrequenztech, D-38106 Braunschweig, Germany

[2] BASF AG, D-67056 Ludwigshafen, Germany

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 21期

关键词：

D O I：

10.1063/1.2936301

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Admittance spectroscopy is a simple yet powerful tool to determine the carrier mobility of organic compounds. One requirement is to have an Ohmic contact for charge injection. By employing a thin interfacial layer of tungsten oxide, or molybdenum oxide we have found a possibility to efficiently inject holes into organic materials with a deep highest occupied molecular orbital level down to 6.3 eV. These results considerably enhance the application range of the admittance spectroscopy method. The measured data are in excellent agreement with data obtained by the time-of-flight technique. (C) 2008 American Institute of Physics.

引用

页数：3

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