Modeling and simulation for dye-sensitized solar cells

被引:39
作者
Yong, Virginia [1 ]
Ho, Seng-Tiong [1 ]
Chang, Robert P. H. [1 ]
机构
[1] Northwestern Univ, Dept Elect Engn & Comp Sci, Dept Mat Sci & Engn, Mat Res Inst, Evanston, IL 60208 USA
基金
美国国家科学基金会;
关键词
D O I
10.1063/1.2908204
中图分类号
O59 [应用物理学];
学科分类号
摘要
We developed an equivalent circuit for dye-sensitized solar cells, which provides a more accurate presentation and a better fit to the experimental I-V curves and Nyquist plots than earlier literature results, as verified by simulation. A simple expression for the estimation of the Warburg coefficient from the experimental Nyquist plot is also proposed in this letter. The simulated I-V curves and Nyquist plots are in good agreement with the experimental data. The interfacial charge transfer and recombination losses at the oxide/dye/electrolyte interface are found to be the most influential factor on the overall conversion efficiency.
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页数:3
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