The effects of ion implantation on the microstructure of CuInSe2 single crystals

被引：13

作者：

Mullan, CA

Kiely, CJ

Yakushev, MV

Imanieh, M

Tomlinson, RD

Rockett, A

机构：

[1] UNIV SALFORD,DEPT ELECTR & ELECT ENGN,SALFORD M5 4WT,LANCS,ENGLAND

[2] UNIV ILLINOIS,URBANA,IL 61801

来源：

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES | 1996年 / 73卷 / 04期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1080/01418619608243709

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The implantation of single-crystal CuInSe2 with O ions is known to cause an n- to p-type carrier conversion and a strong enhancement in photoconductive response. In this paper, we present the first microstructural investigation of O and Xe ion implant damage in CuInSe2 as a function of implant dose. Cross-sectional transmission electron microscopy and secondary-ion mass spectroscopy depth profiling have been used to characterize the implants. Our microstructural observations are correlated both with the theoretical implant profiles and with the measured photoconductivity of the material.

引用

页码：1131 / 1145

页数：15

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