Low-frequency noise in AlGaN-GaN doped-channel heterostructure field effect transistors grown on insulating SiC substrates

被引：4

作者：

Kuksenkov, DV ^{[1
]}

Giudice, GE

Temkin, H

Gaska, R

Ping, A

Adesida, I

机构：

[1] Polaroid Corp, Optoelect Res, Cambridge, MA 02139 USA

[2] Univ Illinois, Microelect Lab, Urbana, IL 61801 USA

[3] Texas Tech Univ, Dept Elect Engn, Lubbock, TX 79409 USA

来源：

ELECTRONICS LETTERS | 1998年 / 34卷 / 23期

关键词：

Frequency range - Heterostructure field effect transistors - Hooge constant;

D O I：

10.1049/el:19981588

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors report low-frequency noise measurements of doped-channel GaN/AlGaN heterostructure field-effect transistors grown on insulating silicon carbide substrates. In the frequency range 1Hz-100kHz the observed noise is of the lif type, and the estimated value of the Hooge constant alpha(H) is similar to 10(13).

引用

页码：2274 / 2276

页数：3

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