The reaction mechanism of the spray Ion Layer Gas Reaction process to deposit In2S3 thin films

被引：11

作者：

Gledhill, Sophie ^{[1
]}

Allison, Rebecca ^{[1
]}

Allsop, Nicholas ^{[1
]}

Fu, Yanpeng ^{[1
]}

Kanaki, Elisavet ^{[1
]}

Saez-Araoz, Rodrigo ^{[1
]}

Lux-Steiner, Martha ^{[1
]}

Fischer, Christian-Herbert ^{[1
]}

机构：

[1] Helmholtz Zentrum Berlin, D-14109 F, Germany

来源：

THIN SOLID FILMS | 2011年 / 519卷 / 19期

关键词：

In2S3; Chemical vapour deposition; Mass spectrometry; ILGAR; Thin film; INDIUM SULFIDE; BUFFER LAYERS; SOLAR-CELLS; PRECURSORS;

D O I：

10.1016/j.tsf.2011.04.131

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The spray Ion Layer Gas Reaction (ILGAR) is a well-established, patented and commercial process used primarily to deposit In2S3 as buffer layers in thin film solar cells. In this paper we investigate the growth mechanism of the spray In2S3 ILGAR process by characterising the intermediate growth stages of films, following the growth mechanism with a quartz crystal microbalance and tracking the gaseous side-and-intermediate products during film growth, using a mass spectrometer. A basic growth mechanism model is then proposed based on an aerosol assisted chemical vapour deposition of an In(O-x,Cl-y,(OH)(z)) film,as the first stage process, followed by the conversion of the intermediate film using H2S gas to In2S3. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：6413 / 6419

页数：7

共 25 条

[1] Indium sulfide thin films deposited by the spray ion layer gas reaction technique [J].