Sc3AIN -: A new perovskite

被引:23
作者
Hoglund, Carina [1 ]
Birch, Jens [1 ]
Beckers, Manfred [1 ]
Alling, Bjoern [1 ]
Czigany, Zsolt [2 ]
Muecklich, Arndt [3 ]
Hultman, Lars [1 ]
机构
[1] Linkoping Univ, Dept Phys Chem & Biol, IFM, S-58183 Linkoping, Sweden
[2] Hungarian Acad Sci, Res Inst Tech Phys & Mat Sci, H-1525 Budapest, Hungary
[3] Rossendorf Inc, Forschungszentrum Rossendorf EV, Inst Ion Beam Phys & Mat Res, D-01314 Dresden, Germany
关键词
crystal growth; density functional theory; electron microscopy; perovskite nitride phases; thin films;
D O I
10.1002/ejic.200701356
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
Sc(3)AIN with perovskite structure has been synthesized as the first ternary phase in the Sc-Al-N system. Magnetron sputter epitaxy at 650 degrees C was used to grow single-crystal, stoichiometric SC3AlN(111) thin films onto MgO(111) substrates with ScN(111) seed layers as shown by elastic recoil detection analysis, X-ray diffraction, and transmission electron microscopy. The Sc3AlN phase has a lattice parameter of 4.40 angstrom, which is in good agreement with the theoretically predicted 4.42 angstrom. Comparisons of total formation energies show that SC3AlN is thermodynamically stable with respect to all known binary compounds. SC3AlN(111) films of 1.75 mu m thickness exhibit a nanoindentation hardness of 14.2 GPa, an elastic modulus of 249 GPa, and a room-temperature electrical resistivity of 41.2 mu Omega cm. ((C) Wiley-VCH Verlag GmbH & Co. KGaA, 69451 Weinheim, Germany, 2008).
引用
收藏
页码:1193 / 1195
页数:3
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