The effects of quaternary additions on thermoelectric properties of TiNiSn-based half-Heusler alloys

被引:92
作者
Katayama, T [1 ]
Kim, SW [1 ]
Kimura, Y [1 ]
Mishima, Y [1 ]
机构
[1] Tokyo Inst Technol, Dept Mat Sci & Engn, Interdisciplinary Grad Sch Sci & Engn, Yokohama, Kanagawa 2268502, Japan
关键词
TiNiSn; half-Heusler; thermoelectric properties; thermal conductivity; microstructure;
D O I
10.1007/s11664-003-0006-5
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Half-Heusler-type compounds have gained increasing attention as promising thermoelectric materials. In the present work, a focus is placed on TiNiSn with additions of Hf, Zr, Si, or Pt. Nominally stoichiometric TiNiSn alloys were prepared using arc melting and subsequent annealing at 1,073 K for 2 weeks. The thermoelectric properties, such as thermoelectric power, electrical resistivity, and thermal conductivity, were measured in a temperature range from 300 K to 1,000 K. As-cast materials show metallic transport properties, while annealed ones exhibit semiconductor behavior. Microstructures of TiNiSn alloys basically consist of nonequilibrium. four-phase; half-Heusler TiNiSn, Heusler TiNi2Sn, metallic Ti6Sn5, and Sn solid solution. The volume fraction of the half-Heusler TiNiSn phase significantly increases by annealing. It is revealed that coexisting metallic phases degrade the thermoelectric properties of half-Heusler TiNiSn. Alloy additions strongly affect not only thermoelectric properties but also phase stability. The thermal conductivity of TiNiSn alloys with alloy additions decreases because of the point-defect phonon scattering.
引用
收藏
页码:1160 / 1165
页数:6
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