Double Channel AlGaN/GaN Heterostructure Field Effect Transistor

被引：3

作者：

Gaska, R ^{[1
]}

Shur, MS ^{[1
]}

Yang, JW ^{[1
]}

Fjeldly, TA ^{[1
]}

机构：

[1] APA Opt Inc, Blaine, MN 55449 USA

来源：

WIDE-BANDGAP SEMICONDUCTORS FOR HIGH POWER, HIGH FREQUENCY AND HIGH TEMPERATURE | 1998年 / 512卷

关键词：

D O I：

10.1557/PROC-512-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on a Double Channel AlGaN/GaN Heterostructure Field Effect Transistor, where the bottom channel is formed by a GaN-AlGaN-GaN Semiconductor-Insulator-Semiconductor structure. The series resistance for the bottom channel is strongly dependent on the drain bias. This new design demonstrates that the current carrying capability of AlGaN/GaN HFETs can be enhanced using multi channel structures.

引用

页码：9 / 13

页数：5