Controlling the spontaneous emission rate of single quantum dots in a two-dimensional photonic crystal

被引：805

作者：

Englund, D ^{[1
]}

Fattal, D

Waks, E

Solomon, G

Zhang, B

Nakaoka, T

Arakawa, Y

Yamamoto, Y

Vuckovic, J

机构：

[1] Stanford Univ, Ginzton Lab, Stanford, CA 94305 USA

[2] Stanford Univ, Solid State Photon Lab, Stanford, CA 94305 USA

[3] Univ Tokyo, Inst Ind Sci, Tokyo, Japan

来源：

PHYSICAL REVIEW LETTERS | 2005年 / 95卷 / 01期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1103/PhysRevLett.95.013904

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We observe large spontaneous emission rate modification of individual InAs quantum dots (QDs) in a 2D photonic crystal with a modified, high-Q single-defect cavity. Compared to QDs in a bulk semiconductor, QDs that are resonant with the cavity show an emission rate increase of up to a factor of 8. In contrast, off-resonant QDs indicate up to fivefold rate quenching as the local density of optical states is diminished in the photonic crystal. In both cases, we demonstrate photon antibunching, showing that the structure represents an on-demand single photon source with a pulse duration from 210 ps to 8 ns. We explain the suppression of QD emission rate using finite difference time domain simulations and find good agreement with experiment.

引用

页数：4

共 15 条

[1]

ENGLUND D, IN PRESS ERROR ANAL

[2] Enhanced light emission of InxGa1-xAs quantum dots in a two-dimensional photonic-crystal defect microcavity -: art. no. 041303 [J].