A high efficiency single chain GaAs MESFET MMIC dual band power amplifier for GSM/DCS handsets

被引：21

作者：

Adar, A ^{[1
]}

DeMoura, J ^{[1
]}

Balshem, H ^{[1
]}

Lott, J ^{[1
]}

机构：

[1] ANADIGICS Inc, Warren, NJ 07059 USA

来源：

GAAS IC SYMPOSIUM - 20TH ANNUAL, TECHNICAL DIGEST 1998 | 1998年

关键词：

D O I：

10.1109/GAAS.1998.722629

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we describe the development of a single chain dual band power amplifier for GSM900/1800 applications. RFIC features include: single input-single output topology, three stages of amplification switched input and inter-stage matching, positive power control, and negative voltage generation. The chip is fabricated using a high volume ion-implanted 0.5 mu m GaAs MESFET process and is assembled in a tow cost, thermally enhanced SSOP16 plastic package. Typical performance, at +4.8 Volts in GSM and DCS bands, is 48% PAE at Pout = +35 dBm and 44% PAE at Pout = +32.5 dBm respectively.

引用

页码：69 / 72

页数：4