Direct experimental evidence of insensitivity of local Schottky barriers to lateral chemical inhomogeneity in case studies of metal/GaN(0001) interfaces

被引：10

作者：

Barinov, A ^{[1
]}

Gregoratti, L ^{[1
]}

Kiskinova, M ^{[1
]}

机构：

[1] Sincrotrone Trieste, I-34012 Trieste, Italy

来源：

PHYSICAL REVIEW B | 2001年 / 64卷 / 20期

关键词：

D O I：

10.1103/PhysRevB.64.201312

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The response of local Schottky barriers (SB) to local specifics of the interface is readdressed by photoelectron microscopy investigations of metal/GaN interfaces, which reveal that compositional and morphological inhomogeneities have no effect on local SB heights. This unexpected behavior is ascribed to lateral charge redistribution between different interface regions leading to homogenization of the SB fluctuations at the semiconductor surface in contact with the metallic layer.

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页数：4

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