Pulsed laser deposition of Nd-doped YBa2Cu3O7-x films for coated conductor applications
被引:6
作者:
Varanasi, C
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USAF, Res Lab, Wright Patterson AFB, OH 45433 USAUSAF, Res Lab, Wright Patterson AFB, OH 45433 USA
Varanasi, C
[1
]
Biggers, RR
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USAF, Res Lab, Wright Patterson AFB, OH 45433 USAUSAF, Res Lab, Wright Patterson AFB, OH 45433 USA
Biggers, RR
[1
]
Maartense, I
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USAF, Res Lab, Wright Patterson AFB, OH 45433 USAUSAF, Res Lab, Wright Patterson AFB, OH 45433 USA
Maartense, I
[1
]
Dempsey, D
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USAF, Res Lab, Wright Patterson AFB, OH 45433 USAUSAF, Res Lab, Wright Patterson AFB, OH 45433 USA
Dempsey, D
[1
]
Peterson, TL
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USAF, Res Lab, Wright Patterson AFB, OH 45433 USAUSAF, Res Lab, Wright Patterson AFB, OH 45433 USA
Peterson, TL
[1
]
Solomon, J
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USAF, Res Lab, Wright Patterson AFB, OH 45433 USAUSAF, Res Lab, Wright Patterson AFB, OH 45433 USA
Solomon, J
[1
]
McDaniel, J
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USAF, Res Lab, Wright Patterson AFB, OH 45433 USAUSAF, Res Lab, Wright Patterson AFB, OH 45433 USA
McDaniel, J
[1
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Kozlowski, G
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USAF, Res Lab, Wright Patterson AFB, OH 45433 USAUSAF, Res Lab, Wright Patterson AFB, OH 45433 USA
Kozlowski, G
[1
]
Nekkanti, R
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USAF, Res Lab, Wright Patterson AFB, OH 45433 USAUSAF, Res Lab, Wright Patterson AFB, OH 45433 USA
Nekkanti, R
[1
]
Oberly, CE
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USAF, Res Lab, Wright Patterson AFB, OH 45433 USAUSAF, Res Lab, Wright Patterson AFB, OH 45433 USA
Oberly, CE
[1
]
机构:
[1] USAF, Res Lab, Wright Patterson AFB, OH 45433 USA
来源:
ADVANCES IN LASER ABLATION OF MATERIALS
|
1998年
/
526卷
关键词:
D O I:
10.1557/PROC-526-263
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
Pulsed-laser ablation was used to deposit YBa2Cu3O7-x (YBCO) films on LaAlO3 and metallic substrates in an effort to understand and develop the processing of coated conductors with enhanced properties. Doping of YBCO films with Nd was utilized as an approach for increasing their flux pinning properties. Separate targets of Nd2O3 and YBCO were used instead of a pre-mixed Nd2O3-YBCO target. The critical current density (J(c)) of the films was measured by whole body de transport measurements and the transition temperature (T-c) by ac susceptibility. The composition vs. depth profiles of the films were obtained by Secondary Ion Mass Spectrometry. The critical current of a 5000 Angstrom thick Nd-doped YBCO film on a LaAlO3 substrate was measured at 77 K and found to be 57 A (J(c) = 1.1 x 10(6) A/cm(2)).