Visible photoluminescence from self-assembled InAs quantum dots embedded in AlAs cladding layers

被引：61

作者：

Lee, UH ^{[1
]}

Lee, D

Lee, HG

Noh, SK

Leem, JY

Lee, HJ

机构：

[1] Chungnam Natl Univ, Dept Phys, Taejon 305764, South Korea

[2] Chungbuk Natl Univ, Sch Elect & Elect Engn, Cheongju 361763, South Korea

[3] Korea Res Inst Stand & Sci, Taejon 305600, South Korea

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 11期

关键词：

D O I：

10.1063/1.123628

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photoluminescence (PL) from InAs self-assembled quantum dots (QD) embedded in the AlAs matrix was strong and clean around 700 nm. PL efficiency remained quite high at room temperature compared to other QD systems embedded in GaAs cladding layers. Transmission electron microscope pictures from the structure showed a clear formation of relatively small and coherently strained InAs QD. The observed blueshift with accompanying broadening of PL spectra with the increase of excitation power is interpreted in terms of local carrier tunneling in a dense QD system. The PL peak redshift with the increase of temperature was very large, as much as 228 meV. The anomalous shift is interpreted as due to activation-energy differences between dots of different sizes. (C) 1999 American Institute of Physics. [S0003-6951(99)02811-9].

引用

页码：1597 / 1599

页数：3

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