Effect of the metal/organic interface phenomena on the current-voltage characteristics of organic single electron tunneling device

被引：11

作者：

Kubota, T

Yokoyama, S

Nakahama, T

Mashiko, S

Noguchi, Y

Majima, Y

Iwamoto, M

机构：

[1] Kansai Adv Res Ctr, Commun Res Lab, Nishi Ku, Kobe, Hyogo 6512492, Japan

[2] Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528552, Japan

来源：

THIN SOLID FILMS | 2001年 / 393卷 / 1-2期

关键词：

single electron tunneling; dendrite molecule; electron tunneling; polyimide; metal/organic interface; electron charging;

D O I：

10.1016/S0040-6090(01)01123-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The current-voltage (I-V) characteristic of Au/PI/(Rh-G2 + PI)/PI/Au (or Al) junctions was examined. An asymmetrical I-V characteristic with several steps was observed for Au/PI/PI:Rh-G2/PI/Al junctions, whereas a symmetric I-V characteristic with steps was obtained for Au/PI/PI:Ph-G2/PI/Au junctions. It was concluded that the presence of metal/organic interfacial states made a significant contribution to the I-V characteristics of these junctions. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：379 / 382

页数：4

共 13 条

[1]

FENDLER JH, 1998, NANOPARTICLES NANOST, pCH15

[2] MICROSTRUCTURED GOLD LANGMUIR-BLODGETT-FILM GOLD TUNNELING JUNCTIONS [J].