Infrared and Raman-scattering studies in single-crystalline GaN nanowires

被引：150

作者：

Liu, HL

Chen, CC

Chia, CT

Yeh, CC

Chen, CH

Yu, MY

Keller, S

DenBaars, SP

机构：

[1] Natl Taiwan Normal Univ, Dept Phys, Taipei 116, Taiwan

[2] Natl Taiwan Normal Univ, Dept Chem, Taipei 116, Taiwan

[3] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

CHEMICAL PHYSICS LETTERS | 2001年 / 345卷 / 3-4期

关键词：

D O I：

10.1016/S0009-2614(01)00858-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Infrared and Raman-scattering studies of high-purity and -quality GaN nanowires are presented. The nanosize dependences of the peak shift and the broadening of the four first-order Raman modes agree with those calculated on the basis of the phonon confinement model. Additionally, the appearance of one Raman mode at similar to 254 cm(-1) is attributed to zone-boundary phonon activated by surface disorders and finite-size effects. Moreover, the Raman-scattering intensities of certain phonons show a different resonantly enhanced behavior, which can be used to verify the information on the electronic structures and the electron-phonon interaction in GaN nanowires. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：245 / 251

页数：7

共 24 条

[1] POLARIZED RAMAN-SPECTRA IN GAN [J].