We have characterized the intrinsic 1/f noise of ion-implanted silicon thermistors in the 0.05 - 0.5 K temperature range. This noise can have a significant effect on detector performance and needs to be taken into account in the design optimization of infrared bolometers and x-ray microcalorimeters. The noise can be reasonably well fit as Delta R/R fluctuations whose spectral density varies as 1/f and increases steeply with lower doping density and lower temperatures. The observed 1/f noise can be approximated as a resistance fluctuation: [Delta R-2]/R-2 = 0.034(T-0/1K)(2.453)(T-e/0.15K)(-(5.2+0.9 log(T0)))/(3.5 x 10(18) cm(-3) V-therm f).