Precipitates in GaN epilayers grown on sapphire substrates

被引：14

作者：

Kang, JY ^{[1
]}

Ogawa, T

机构：

[1] Xiamen Univ, Dept Phys, Xiamen 361005, Peoples R China

[2] Gakushuin Univ, Dept Phys, Tokyo 171, Japan

来源：

JOURNAL OF MATERIALS RESEARCH | 1998年 / 13卷 / 08期

基金：

日本学术振兴会;

关键词：

D O I：

10.1557/JMR.1998.0293

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Precipitates in GaN epilayers grown on sapphire substrates were investigated by atomic number contrast (ANC), wavelength-dispersive x-ray spectrometry (WDS), energy-dispersive spectrometry (EDS), and cathodoluminescence (CL) techniques. The results showed that the precipitates are mainly composed of gallium and oxygen elements and distribute more sparsely and inhomogeneously in [11 (2) over bar 0] directions in the sample grown on substrate nitridated for a longer period. Yellow luminescence intensity was imaged to be stronger in the precipitates. The results suggest that the precipitates are formed on dislocations and grain boundaries by substituting oxygen onto the nitrogen site, and result in the formations of deep levels nearby.

引用

页码：2100 / 2104

页数：5

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