Modification of band offsets by a ZnSe intralayer at the Si/Ge(111) interface

被引：5

作者：

Pan, M ^{[1
]}

Wilks, SP

Dunstan, PR

Pritchard, M

Williams, RH

Cammack, DS

Clark, SA

机构：

[1] Univ Coll Swansea, Dept Elect & Elect Engn, Semicond Interface Res Grp, Swansea SA2 8PP, W Glam, Wales

[2] Sheffield Hallam Univ, Mat Res Inst, Sheffield S1 1WB, S Yorkshire, England

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 21期

关键词：

D O I：

10.1063/1.121106

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter, the use of an ordered ultrathin ZnSe dipole layer to significantly modify the band discontinuity at the Si/Ge(III)-c(2x8) heterojunction is reported. Soft x-ray photoemission spectroscopy (SXPS) was utilized to monitor the evolution of the interface. The ZnSe intralayer increased the valence band offset by similar to 0.57 eV, as compared to a negligible valence band offset for the Si/Ge(III)junction. This dramatic modification is interpreted in terms of the charge transfer at the interface. (C) 1998 American Institute of Physics.

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页码：2707 / 2709

页数：3

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