Fabrication of Cd1-xZnxS films with controllable zinc doping using a vapor zinc chloride treatment

被引：21

作者：

Xia, Wei ^{[1
]}

Welt, Jonathan A. ^{[1
]}

Lin, Hao ^{[1
]}

Wu, Hsiang N. ^{[1
]}

Ho, Meng H. ^{[1
,2
]}

Tang, Ching W. ^{[1
]}

机构：

[1] Univ Rochester, Dept Chem Engn, Rochester, NY 14627 USA

[2] Natl Chiao Tung Univ, Dept Appl Chem, Hsinchu 300, Taiwan

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2010年 / 94卷 / 12期

关键词：

Vapor zinc chloride treatment; Cd1-xZnxS; CdS; CdTe solar cells; CDTE SOLAR-CELLS; THIN-FILMS; ZNXCD1-XS FILMS; EFFICIENCY; DEPOSITION;

D O I：

10.1016/j.solmat.2010.06.037

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Cd1-xZnxS films suitable for application in photovoltaic devices have been produced by annealing CdS films in vaporous zinc chloride and characterized by optical absorption, X-ray diffraction, energy dispersive X-ray spectroscopy and scanning electron microscopy. The incorporation of Zn in CdS was found to be dependent on the annealing temperature and duration, reaching a concentration as high as 50% (x=0.5) and producing a blue shift of 0.3 eV in bandgap energy. CdTe solar cells fabricated with Cd1-xZnxS showed substantially higher short-circuit current than the cells with CdS as the window layer. The optimal concentration of Zn was found to be around 5%. High efficiencies were obtained in SnO2/Cd1-xZnxS/CdTe cells. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：2113 / 2118

页数：6

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