共 20 条
[1]
BLASSE G, 1968, PHILIPS RES REP, V23, P189
[2]
BLASSE G, 1969, PHILIPS RES REP, V24, P131
[4]
BLASSE G, 1994, LUMINSCENT MAT, P46803
[6]
THE BETA-REVERSIBLE-ALPHA' TRANSITION IN SR2SIO4 (AND CA2SIO4, K2SEO4 ETC), INVOLVING A MODULATED STRUCTURE
[J].
ACTA CRYSTALLOGRAPHICA SECTION B-STRUCTURAL SCIENCE,
1986, 42
:423-429
[7]
Juestel T., 2000, US Patent, Patent No. [6,084,250, 6084250]
[9]
GaN-Based white-light-emitting diodes fabricated with a mixture of Ba3MgSi2O8:Eu2+ and Sr2SiO4:Eu2+ phosphors
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS,
2004, 43 (03)
:989-992