High-efficiency Cd2SnO4/Zn2SnO4/ZnxCd1-xS/CdS/CdTe polycrystalline thin-film solar cells

被引：22

作者：

Wu, X ^{[1
]}

Ribelin, R ^{[1
]}

Dhere, RG ^{[1
]}

Albin, DS ^{[1
]}

Gessert, TA ^{[1
]}

Asher, S ^{[1
]}

Levi, DH ^{[1
]}

Mason, A ^{[1
]}

Moutinho, HR ^{[1
]}

Sheldon, P ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

CONFERENCE RECORD OF THE TWENTY-EIGHTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 2000 | 2000年

关键词：

D O I：

10.1109/PVSC.2000.915873

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

CdTe-based thin-film solar cells have been limited to the conventional SnO2/CdS/CdTe device structure. In this paper, we report a modified device structure consisting of Cd2SnO4/Zn2SnO4/ZnxCd1-xS/CdS/CdTe layers, that yields improved performance and reproducibility. Cadmium stannate (Cd2SnO4, or CTO) transparent conductive oxide (TCO) films have several significant advantages over conventional SnO2 films. CTO-based CdTe cells have approximately 1 mA/cm(2) higher J(sc) than SnO2-based CdTe cells. Integrating zinc stannate (Zn2SnO4, or ZTO) into the device as a buffer layer helps maintain high Voc and fill factor when reducing CdS thickness to improve J(sc). XPS and SIMS results show substantial interdiffusion between the CdS and ZTO layers. This feature can be used to optimize device performance and reproducibility. We have fabricated a Cd2SnO4/Zn2SnO4/ZnXCd1-xS/CdS/CdTe cell with an NREL-confirmed total-area efficiency of 15.8%.

引用

页码：470 / 474

页数：5

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