Total dose effects on power-MOSFET switching converters

被引：17

作者：

Pizano, JE ^{[1
]}

Ma, TH

Attia, JO

Schrimpf, RD

Galloway, KF

Witulski, AF

机构：

[1] Univ Arizona, Dept Elect & Comp Engn, Tucson, AZ 85721 USA

[2] Prairie View A&M Univ, Dept Elect Engn, Prairie View, TX 77446 USA

[3] Vanderbilt Univ, Dept Elect & Comp Engn, Nashville, TN 37235 USA

来源：

MICROELECTRONICS RELIABILITY | 1998年 / 38卷 / 12期

基金：

美国国家航空航天局;

关键词：

D O I：

10.1016/S0026-2714(98)00154-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Power MOSFETs have important applications in space systems; particularly in dc/dc power conversion. Transistors used in the space environment are subject to the effects of exposure to the natural radiation environment in space. Among the effects of ionizing radiation are shifts in threshold voltage and reduction of carrier mobility. In this work, the total-ionizing-dose-induced degradation of two switching power converters is examined. The MOSFETs for two switching converters were irradiated with a Co-60 source and their performance was evaluated in buck and boost converters. The experimental results agree well with values obtained from SPICE simulations. (C) 1998 Elsevier Science Ltd. All rights reserved.

引用

页码：1935 / 1939

页数：5

共 14 条

[1] POWER MOSFET CHARACTERISTICS WITH MODIFIED SPICE MODELING [J].

CHENG, H ;

MILNES, AG .

SOLID-STATE ELECTRONICS, 1982, 25 (12) :1209-1212

[2]

Cuk S., 1981, ADV SWITCHED MODE PO, VII

[3]

Dolny G. M., 1985, Proceedings Power Electronics Design Conference, P147

[4]

Galloway K. F., 1990, Microelectronics Journal, V21, P67, DOI 10.1016/0026-2692(90)90027-Z

[5]

GALLOWAY KF, 1989, ANN PHYS-PARIS, V14, P119

[6]

GRANT DA, 1989, THEORY APPL

[7]

Hower P. L., 1981, PowerConversion International, V7, P45

[8]

*INT RECT, 1987, SPIC COMP MOD HEXFET

[9]

LAURITZEN PO, 1985, P POW CONV INT C, P372

[10] COMPUTER-AIDED SIMULATION OF POWER MOSFET SWITCH-MODE CONVERTERS [J].

MINASIAN, RA .

ELECTRONICS LETTERS, 1984, 20 (11) :454-456

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