Frequency response of common lead and shield type magnetic tunneling junction head

被引:17
作者
Shimazawa, K
Sun, JJ
Kasahara, N
Sato, K
Kagami, T
Saruki, S
Redon, O
Fujita, Y
Umehara, T
Syoji, J
Araki, S
Matsuzaki, M
机构
[1] TDK Corp, Data Storage Technol Ctr, Nagano 3850009, Japan
[2] TDK Corp, Head Div 1, DASCOM, Nagano 3858555, Japan
关键词
common lead and shield; cut off frequency; data transfer rate; input impedance; magnetic recording/magnetic tunnel junction heads; stray capacitance;
D O I
10.1109/20.950937
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this work, the frequency response in magnetic tunnel junction (MTJ) heads was studied. Both stray capacitance and junction resistance, forming a low-pass-filter, have to be reduced to improve the cutoff frequency in MTJ heads. By employing an Ar gas cluster ion beam (GCIB) process, junctions grown on the magnetic shield show a resistance area product as low as 3.6 Omega mum(2) and tunneling magneto-resistance over 14%. The dominant capacitance in common lead and shield MTJ heads was found mainly resulting from the shield-to-shield spacing, whose capacitance can be reduced by using an SiO2 gap layer instead of Al-2 O-3 layer and thus leading to an improved frequency response. Simple analysis indicates that a read amplifier design with low impedance could be helpful to realize a high data transfer rate, and a rate of around 800 Mbps for 100 Gbits/in(2) recording system can be thus expected.
引用
收藏
页码:1684 / 1686
页数:3
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