Gate-controlled electron spin resonance in GaAs/AlxGa1-xAs heterostructures -: art. no. 041307

被引：87

作者：

Jiang, HW ^{[1
]}

Yablonovitch, E

机构：

[1] Univ Calif Los Angeles, Dept Phys & Astron, Los Angeles, CA 90095 USA

[2] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA

来源：

PHYSICAL REVIEW B | 2001年 / 64卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.64.041307

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electron spin resonance (ESR) of two-dimensional electrons is investigated in a gated GaAs/AlGaAs heterostructure. We found that the ESR resonance frequency can be tuned by means of a gate voltage. The front and back gates of the heterostructure produce opposite g-factor shift, suggesting that electron g factor is being electrostatically controlled by shifting the equilibrium position of the electron wave function from one epitaxial layer to another with different g factors.

引用

页数：4

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