Analysis of the effect of isotope scattering on the thermal conductivity of crystalline silicon

被引：21

作者：

Capinski, WS ^{[1
]}

Maris, HJ

Tamura, S

机构：

[1] Brown Univ, Dept Phys, Providence, RI 02912 USA

[2] Hokkaido Univ, Dept Appl Phys, Sapporo, Hokkaido 060, Japan

来源：

PHYSICAL REVIEW B | 1999年 / 59卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.59.10105

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present an analysis of recent thermal-conductivity measurements on crystalline silicon in which the concentration of the Si-28 isotope has been increased above the natural abundance. We calculate from the phonon Boltzmann equation the change in the conductivity due to a change in isotope concentration. The conductivity change is evaluated numerically using a realistic model of the lattice dynamics of silicon. [S0163-1829(99)01716-6].

引用

页码：10105 / 10110

页数：6

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