High power, high speed single mode diode lasers for optical intersatellite link applications

被引：2

作者：

Li, B ^{[1
]}

Sha, W ^{[1
]}

Yeh, S ^{[1
]}

Nagarajan, R ^{[1
]}

Craig, RR ^{[1
]}

机构：

[1] Spectra Diode Labs, San Jose, CA 95134 USA

来源：

FREE-SPACE LASER COMMUNICATION TECHNOLOGIES X | 1998年 / 3266卷

关键词：

D O I：

10.1117/12.308717

中图分类号：

V [航空、航天];

学科分类号：

08 ; 0825 ;

摘要：

High power single-mode AlGaAs semiconductor lasers operating between 820 nm and 860 nm (SDL-5400 series diodes) have been successfully qualified for deployment in many free-space inter-satellite communication link programs. Traditionally these high power devices did not have sufficient bandwidth for direct high speed modulation because of large device and package parasitics. We have improved the device parasitics of the SDL-5430 laser diode, i.e. reduced the RC product, from 240 ps to about 40 ps. The initial measurements indicate that this device (SDL-5480) is suitable for high power optical inter-satellite link (OISL) applications at data rates greater than 1 Gbit/s. The preliminary life test indicates that the new device has better a reliability than the previous design.

引用

页码：49 / 53

页数：5