Electrodeposited metal sulfide semiconductor films with ordered nanohole array structures

被引：23

作者：

Jiang, KY ^{[1
]}

Wang, Y ^{[1
]}

Dong, JJ ^{[1
]}

Gui, LL ^{[1
]}

Tang, YQ ^{[1
]}

机构：

[1] Peking Univ, Inst Phys Chem, State Key Lab Struct Chem Unstable & Stable Speci, Beijing 100871, Peoples R China

来源：

LANGMUIR | 2001年 / 17卷 / 12期

关键词：

D O I：

10.1021/la0010976

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Porous CdS and SnS films with ordered nanohole array structures were produced from anodic porous alumina by a two-step replication process. The nanohole array structure was formed by electrodeposition of CdS or SnS onto a prepared negative structure of the porous alumina template. The porous metal sulfide films with uniform, closely packed, and straight nanoholes are 1 mum thick and contain pores of an average diameter of 200 nm. Energy-dispersive spectrometry and X-ray photoelectron spectroscopy analyses indicate that the stoichiometric ratio of metal to sulfur is approximately 1:1 in the porous films. The crystal structures of CdS and SnS in the porous films were characterized by X-ray diffraction.

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页码：3635 / 3638

页数：4

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