Optical properties of Zn1-xCoxO thin films grown on Al2O3 (0001) substrates -: art. no. 101903

被引：73

作者：

Samanta, K ^{[1
]}

Bhattacharya, P ^{[1
]}

Katiyar, RS ^{[1
]}

机构：

[1] Univ Puerto Rico, Dept Phys, San Juan, PR 00931 USA

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 10期

基金：

美国国家航空航天局;

关键词：

D O I：

10.1063/1.2039995

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thin films of Zn1-xCoxO (x=1-15%) were grown on an Al2O3 (0001) substrate by pulsed laser deposition and characterized by investigating their photoluminescence (PL) and other optical properties. The films were highly (0001) oriented without any impurity phases as observed in x-ray diffraction. The optical transmittance spectra showed that the band edge of Zn1-xCoxO was decreased with increase of Co concentration along with a subbandgap absorption in the range of 1.8 to 2.2 eV. The near band-edge PL spectrum of ZnO thin films at 77 K showed a strong peak of donor bound exciton at 3.307 eV along with the free excitons. However, the PL spectra for free excitons of the Zn1-xCoxO films at 77 K did not show any significant redshift due to Co incorporation. (c) 2005 American Institute of Physics.

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