Improved response of uni-traveling-carrier photodiodes by carrier injection

被引：52

作者：

Shimizu, N ^{[1
]}

Watanabe, N ^{[1
]}

Furuta, T ^{[1
]}

Ishibashi, T ^{[1
]}

机构：

[1] NTT, Syst Elect Labs, Atsugi, Kanagawa 2430198, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1998年 / 37卷 / 3B期

关键词：

InP/InGaAs; heterostructure; photodiode; 3-dB bandwidth; electro-optic sampling;

D O I：

10.1143/JJAP.37.1424

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied the ultrafast response of uni-traveling-carrier photodiodes with photo-absorption layer doping levels from 2.5 x 10(17) to 2.5 x 10(18) cm(-3). It is found that 3-dB band width increases with the output voltage in the low output region. This enhancement is more prominent for a lower doping level in the photo-absorption layer. From the analysis of the carrier transport in the photo-absorption layer, we attribute the observed enhanced bandwidth as a result of the self-induced electric field associated with carrier injection.

引用

页码：1424 / 1426

页数：3