Wetting on a geometrically structured substrate

被引：25

作者：

Bruschi, L

Carlin, A

Mistura, G

机构：

[1] Ist Nazl Fis Nucl, I-35131 Padua, Italy

[2] Univ Padua, Dipartimento Fis G Galilei, I-35131 Padua, Italy

来源：

JOURNAL OF CHEMICAL PHYSICS | 2001年 / 115卷 / 13期

关键词：

D O I：

10.1063/1.1399037

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We have measured the growth of liquid films of Ar and Kr adsorbed on a geometrically structured substrate obtained by machining on a lathe a thin Al disk with a sharp cutting tool. Near liquid-vapor bulk coexistence, the film mass is found to diverge as a power law of the chemical potential difference from saturation with an exponent x=-1.93 +/-0.10, in very good agreement with recent scaling analysis results. (C) 2001 American Institute of Physics.

引用

页码：6200 / 6203

页数：4

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