Hydrogen incorporation during nucleation and growth of c-BN films

被引:18
作者
Kuhr, M [1 ]
Freudenstein, R [1 ]
Reinke, S [1 ]
Kulisch, W [1 ]
Dollinger, G [1 ]
Bergmaier, A [1 ]
机构
[1] TECH UNIV MUNICH,DEPT PHYS E12,D-85747 GARCHING,GERMANY
关键词
c-BN nucleation; c-BN growth; hydrogen incorporation; ERD measurements;
D O I
10.1016/0925-9635(95)00472-6
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The hydrogen content of BN films deposited by the ICP plasma method from trimethyl borazine and N-2 has been investigated integrally and spatially resolved by elastic recoil detection. Hydrogen contents between 15% and 25% have been found for conditions allowing the formation of c-BN compared with 4%-10% for h-BN conditions (low bias voltages). However, under c-BN conditions hydrogen is concentrated within the sp(2) parts of the film, particularly within the nucleation layer. Addition of hydrogen to the gas phase prevents the formation of c-BN and leads to h-BN films with high hydrogen contents. FTIR examination shows that the films do not contain BH and NH bonds; traces of OH and CHx do not add up to the total hydrogen content. Therefore most of the hydrogen must be free, for example incorporated on interstitials.
引用
收藏
页码:984 / 989
页数:6
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