Characterization of tantalum nitride thin films fabricated by pulsed Nd:YAG laser deposition method

被引：8

作者：

Kawasaki, H

Doi, K

Namba, J

Suda, Y

Ohshima, T

Ebihara, K

机构：

[1] Sasebo Natl Coll Technol, Dept Elect Engn, Nagasaki 8571193, Japan

[2] Kumamoto Univ, Grad Sch Sci & Technol, Kumamoto 8600862, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2001年 / 40卷 / 4A期

关键词：

tantalum nitride; pulsed laser deposition; thin films; plasma process; silicon technology;

D O I：

10.1143/JJAP.40.2391

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Growth mechanisms of crystalline tantalum nitride (TaN) films have been studied on silicon substrates using a pulsed Nd:YAG laser deposition method. Experimental results show that the properties of the TaN films strongly depend on the substrate temperatures and nitrogen gas pressures. This suggests that both the phase reaction in the plasma plume and the surface reaction on the substrate are important for preparing crystalline TaN films.

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收藏

页码：2391 / 2394

页数：4

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