Field-modulating plate (FP) InGaP MESFET with high breakdown voltage and low distortion

被引：4

作者：

Wakejima, A ^{[1
]}

Ota, K ^{[1
]}

Matsunaga, K ^{[1
]}

Contrata, W ^{[1
]}

Kuzuhara, M ^{[1
]}

机构：

[1] NEC Corp Ltd, Syst Devices & Fundamental Res, Otsu, Shiga 5200833, Japan

来源：

2001 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS | 2001年

关键词：

D O I：

10.1109/RFIC.2001.935664

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes a successfully developed field-modulating plate (FP) InGaP MESFET with an extremely high breakdown voltage of 100V. The FP-FET, consisting of a 2.62 mm gate width, delivered an output power of 4.3 W and an output power density of 1.6 W/mm at 1.95 GHz operated at a drain bias (Vd) of 55 V. A low 3rd-order intermodulation distortion (IM3) of -31 dBc was also achieved at 8 dB back-off from saturation power. These results show the developed FET is suited for applications in the next generation cellar base station.

引用

页码：151 / 154

页数：4