Optical properties of self-organized wurtzite InN/GaN quantum dots: A combined atomistic tight-binding and full configuration interaction calculation

被引：42

作者：

Baer, N ^{[1
]}

Schulz, S ^{[1
]}

Schumacher, S ^{[1
]}

Gartner, P ^{[1
]}

Czycholl, G ^{[1
]}

Jahnke, F ^{[1
]}

机构：

[1] Natl Inst Mat Phys, Bucharest, Romania

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 23期

关键词：

D O I：

10.1063/1.2139621

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this work, we investigate the electronic and optical properties of self-assembled InN/GaN quantum dots. The one-particle states of the low-dimensional heterostructures are provided by a tight-binding model that fully includes the wurtzite crystal structure on an atomistic level. Optical dipole and Coulomb matrix elements are calculated from these one-particle wave functions and serve as an input for full configuration interaction calculations. We present multiexciton emission spectra and discuss in detail how Coulomb correlations and oscillator strengths are changed by the piezoelectric fields present in the structure. Vanishing exciton and biexciton ground state emission for small lens-shaped dots is predicted. (c) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

共 24 条

[1] Optical transitions and radiative lifetime in GaN/AlN self-organized quantum dots [J].