Epitaxial Si/SiO2 low dimensional structures

被引：8

作者：

Ishikawa, Y

Shibata, N

Fukatsu, S

机构：

[1] Japan Fine Ceram Ctr, Atsuta Ku, Nagoya, Aichi 456, Japan

[2] Univ Tokyo, Dept Pure & Appl Sci, Meguro Ku, Tokyo 153, Japan

来源：

THIN SOLID FILMS | 1998年 / 321卷

基金：

日本科学技术振兴机构;

关键词：

molecular beam epitaxy; Si/SiO2; low dimensional structures;

D O I：

10.1016/S0040-6090(98)00479-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Fabrication of epitaxial Si/SiO2 low dimensional structures using in situ multiple low energy oxygen implantation in combination with Si molecular beam epitaxy is described, highlighting its potential for the control of quantum confinement structures. Highly-oriented Si nanodots and Si quantum wires embedded in SiO2 are demonstrated as prominent examples and the formation mechanism of the epitaxial Si/SiO2 bilayer is described. Successful growth of epi-ready Si/SiO2 Bragg reflector is demonstrated in view of optoelectronic application. (C) 1998 Elsevier Science S.A. All rights reserved.

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页码：234 / 240

页数：7

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