InAs-Dot/GaAs structures site-controlled by in situ EB lithography and self-organizing MBE growth

被引：1

作者：

Kohmoto, S ^{[1
]}

Ishikawa, T ^{[1
]}

Asakawa, K ^{[1
]}

机构：

[1] Femtosecond Technol Res Assoc, FESTA, Tsukuba, Ibaraki 3002635, Japan

来源：

1998 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS | 1998年

关键词：

D O I：

10.1109/ICIPRM.1998.712773

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel site-control technique for InAs dots on GaAs has been demonstrated by a combination of in situ electron-beam (EB) lithography and self-organizing molecular-beam epitaxy (MBE) using an ultrahigh vacuum multi-chamber system. On an MBE-grown GaAs (001) surface, shallow holes of sub-micron size were patterned by in situ EB writing and Cl-2-gas etching. By supplying more than a 1.4 monolayer of InAs onto the patterned surface, In(Ga)As dots were preferentially self-organized in the holes, while dot-formation around the holes was sufficiently suppressed, due to the selectivity of In atom-incorporation in the (111)B-like slope in the hole. This indicates the usefulness of such techniques in fabricating arbitrarily arranged quantum-dot structures.

引用

页码：769 / 772

页数：4