Hot electron emission lithography

被引：19

作者：

Poppeller, M ^{[1
]}

Cartier, E ^{[1
]}

Tromp, RM ^{[1
]}

机构：

[1] IBM Corp, Div Res, Thomas J Watson Res Ctr, Yorktown Heights, NY 10598 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 19期

关键词：

D O I：

10.1063/1.122606

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have developed an electron lithography method, hot electron emission lithography, which is capable of printing integrated circuits with an exposure time of only a few seconds. The basic design and fabrication of the patterned electron emitting mask made by standard metal-oxide-semiconductor technology will be discussed, and its applicability in a simple 1:1 e-beam stepper will be demonstrated. Patterns with a minimum feature size of 160 nm have been printed successfully. Further improvements in resolution to 50 nm appear to be possible. (C) 1998 American Institute of Physics. [S0003-6951(98)04645-2].

引用

页码：2835 / 2837

页数：3

共 20 条

[1] HOT-ELECTRON TRANSPORT THROUGH THIN DIELECTRIC FILMS - BOLTZMANN THEORY AND ELECTRON-SPECTROSCOPY [J].

BERNASCONI, J ;

CARTIER, E ;

PFLUGER, P .

PHYSICAL REVIEW B, 1988, 38 (17) :12567-12581

[2]

BRANDES GR, Patent No. 5395738

[3] DIRECT MEASUREMENT OF THE ENERGY-DISTRIBUTION OF HOT-ELECTRONS IN SILICON DIOXIDE [J].

BRORSON, SD ;

DIMARIA, DJ ;

FISCHETTI, MV ;

PESAVENTO, FL ;

SOLOMON, PM ;

DONG, DW .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) :1302-1313

[4] A 1-1 ELECTRON STEPPER [J].

DELONG, A ;

KOLARIK, V .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (06) :1422-1425

[5] Ultimate limit for defect generation in ultra-thin silicon dioxide [J].

DiMaria, DJ ;

Stathis, JH .

APPLIED PHYSICS LETTERS, 1997, 71 (22) :3230-3232

[6] Preliminary results from a prototype projection electron-beam stepper-scattering with angular limitation projection electron beam lithography proof-of-concept system [J].

Harriott, LR ;

Berger, SD ;

Biddick, C ;

Blakey, MI ;

Bowler, SW ;

Brady, K ;

Camarda, RM ;

Connelly, WF ;

Crorken, A ;

Custy, J ;

Dimarco, R ;

Farrow, RC ;

Felker, JA ;

Fetter, L ;

Freeman, R ;

Hopkins, L ;

Huggins, HA ;

Knurek, CS ;

Kraus, JS ;

Liddle, JA ;

Mkrtychan, M ;

Novembre, AE ;

Peabody, ML ;

Tarascon, RG ;

Wade, HH ;

Waskiewicz, WK ;

Watson, GP ;

Werder, KS ;

Windt, D .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (06) :3825-3828

[7]

Hawryluk AM, 1997, SOLID STATE TECHNOL, V40, P151

[8]

Hawryluk AM, 1997, SOLID STATE TECHNOL, V40, P75

[9]

LISCHKE B, Patent No. 4601971

[10] IMAGING AND ALIGNMENT TESTS ON AN ELECTRON PROJECTION SYSTEM [J].

LIVESAY, WR .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (03) :1022-1027

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