Ge-quantum dots on Si(001) tailored by carbon predeposition

被引：9

作者：

Leifeld, O ^{[1
]}

Grutzmacher, D ^{[1
]}

Muller, B ^{[1
]}

Kern, K ^{[1
]}

机构：

[1] Paul Scherrer Inst, Micro & Nanostruct Lab, CH-5232 Villigen, Switzerland

来源：

EPITAXY AND APPLICATIONS OF SI-BASED HETEROSTRUCTURES | 1998年 / 533卷

关键词：

D O I：

10.1557/PROC-533-183

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The morphology of Si(001) after carbon deposition of 0.05 to 0.11 monolayers (ML) was investigated in situ by ultra-high vacuum scanning tunneling microscopy (UHV-STM). The carbon induces a c(4x4)-reconstrutction of the surface. In addition, carbon increases the surface roughness compared to clean Si(001) (2x1). In a second step, the influence of the carbon induced restructuring on Ge-island nucleation was investigated. The 3D-growth sets in at considerably lower Ge coverage compared to the clean Si(001) (2x1) surface. This leads to a high density of small though irregularly shaped dots, consisting of stepped terraces, already at 2.5 ML Ge. Increasing the Ge-coverage beyond the critical thickness for facet formation, the dots show {105}-facets well known from Ge-clusters on bare Si(001) (2x1). However, they are flat on top with a (001)-facet showing the typical buckled Ge rows and missing dimers. This indicates that the compressive strain is not fully relaxed in these hut clusters.

引用

页码：183 / 189

页数：7