Modeling thermoelectric behavior in Bi nano-wires

被引：16

作者：

Dresselhaus, G ^{[1
]}

Dresselhaus, MS ^{[1
]}

Zhang, Z ^{[1
]}

Sun, X ^{[1
]}

Ying, J ^{[1
]}

Chen, G ^{[1
]}

机构：

[1] MIT, Francis Bitter Natl Magnet Lab, Cambridge, MA 02139 USA

来源：

XVII INTERNATIONAL CONFERENCE ON THERMOELECTRICS, PROCEEDINGS ICT 98 | 1998年

关键词：

D O I：

10.1109/ICT.1998.740314

中图分类号：

O414.1 [热力学];

学科分类号：

摘要：

The small effective mass of Pi and high anisotropy of its Fermi surface make Pi nono-wires an excellent system for studying quantum confinement effects on the transport properties of a quasi one-dimensional (1D) electron gas, such as the electrical conductivity, magnetoresistance, thermoelectric power, and thermal conductivity. A theoretical model based on the basic band structure of bulk Pi, suitably modified for the 1D situation, is developed to predict the dependence of these quantities on wire diameter, temperature and crystalline orientation of the Pi nano-wires. Experiments have been carried out on ultra-fine single-crystalline Pi nano-wires (10-120 nm in diameter) with packing densities as high as 7 x 10(10) nanowires/cm(2) to test the quantum confinement assumptions of the model. Strong experimental evidence has been observed for an interesting quantum confinement-induced semimetal-to-semieonductor transition in Pi nano-wires with diameters less than 100 nm.

引用

页码：43 / 46

页数：4