Towards large area simulation of E-beam lithography

被引：6

作者：

Bohn, M ^{[1
]}

Hofmann, U ^{[1
]}

Hoppe, W ^{[1
]}

Progler, C ^{[1
]}

Ryzhoukhin, M ^{[1
]}

机构：

[1] SIGMAC, D-81737 Munich, Germany

来源：

23RD ANNUAL BACUS SYMPOSIUM ON PHOTOMASK TECHNOLOGY, PTS 1 AND 2 | 2003年 / 5256卷

关键词：

lithography modeling; E-beam lithography; direct write; mask making;

D O I：

10.1117/12.520812

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

As in optical lithography, E-beam lithography is facing a multitude of issues, both in mask making and in direct write applications. These issues range from pattern printability and design verifications to tool and process optimizations. Simulation can be used to address these issues, however its applicability was limited due to limitations in the usable simulation area. Advances in the mathematical models lead to a significant speedup of the simulation, enabling the simulation of larger areas. This paper will demonstrate the applicability of the new simulator on a few key examples, such as aggressive mask challenges, model to experiment correlation as well as its application to direct write.

引用

页码：695 / 700

页数：6