Enhanced dielectric properties of SrTiO3 epitaxial thin film for tunable microwave devices

被引：41

作者：

Bouzehouane, K ^{[1
]}

Woodall, P ^{[1
]}

Marcilhac, B ^{[1
]}

Khodan, AN ^{[1
]}

Crété, D ^{[1
]}

Jacquet, E ^{[1
]}

Mage, JC ^{[1
]}

Contour, JP ^{[1
]}

机构：

[1] CNRS Thales, Unite Mixte Phys, F-91404 Orsay, France

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 01期

关键词：

D O I：

10.1063/1.1428411

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The performance of tunable microwave devices based on heteroepitaxial YBa2Cu3Ox/SrTiO3 films on (001) LaAlO3 substrates has been evaluated. It was ascertained that "out-of-plane" SrTiO3 lattice parameter is the relevant factor in determining both device agility and dielectric loss. After high temperature annealing (1100 degreesC, 1 atm O-2), only SrTiO3 layers deposited under low oxygen pressure (similar to 10(-5) Torr) show an appreciable reduction of the dielectric losses while maintaining high agility. Annealed samples exhibit voltage independent losses of similar to 5x10(-3) simultaneously with 55% dielectric agility at 6 GHz and 77 K. (C) 2002 American Institute of Physics.

引用

页码：109 / 111

页数：3

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