Laser-induced thermal imaging of polymer light-emitting materials on poly(3,4-ethylenedioxythiophene): Silane hole-transport layer

被引：51

作者：

Lee, JY ^{[1
]}

Lee, ST ^{[1
]}

机构：

[1] Samsung SDI Co Ltd, Corp R&D Ctr, Yongin 449902, Gyeonggi Do, South Korea

来源：

ADVANCED MATERIALS | 2004年 / 16卷 / 01期

关键词：

D O I：

10.1002/adma.200305699

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The addition of methacryloxypropyl-trimethoxysilane to poly(3,4-ethylenedioxythiophene) has enabled laser-induced thermal imaging (LITI) of polymer light-emitting materials on a hole-transport layer (see Figure for example). The I-V-L (current-voltage-luminance) performances of the device patterned by the LITI process are comparable to those of typical spin-coated devices.

引用

页码：51 / +

页数：5

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