Properties of the strongly correlated two-dimensional electron gas in Si MOSFET's

被引：37

作者：

Spivak, B ^{[1
]}

机构：

[1] Univ Washington, Dept Phys, Seattle, WA 98195 USA

来源：

PHYSICAL REVIEW B | 2001年 / 64卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.64.085317

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We discuss properties of the strongly correlated two-dimensional electron gas in Si metal-oxide-semiconductor field-effect transistor at low concentrations assuming that the electron liquid is close to crystallization. Analogy with the theory of He-3 is emphasized.

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页数：6

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