Ultra-thin oxide growth on silicon using ozonated solutions

被引：4

作者：

De Smedt, F

Vinckier, C

Cornelissen, I

De Gendt, S

Meuris, M

Gilis, G

Heyns, M

机构：

[1] Univ Louvain, Dept Chem, B-3001 Louvain, Belgium

[2] IMEC, B-3001 Louvain, Belgium

来源：

SOLID STATE PHENOMENA | 1999年 / 65-6卷

关键词：

ozone; oxidation;

D O I：

10.4028/www.scientific.net/SSP.65-66.81

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ultra-thin oxide layers were grown using ozonated solutions in function of following parameters: immersion time, ozone concentration and pH. The grown layers were etched away and the oxide layer thickness was measured by determining the Si-concentration in the etch solutions by the Molybdenum Blue method. The oxide layer thickness evolves within 10 minutes to a quasi-maximum and depends on the ozone concentration in the range of 1-15 ppm. At a pH of 1.2 (HNO3) the maximum is somewhat higher than at pH = 4.6. An initial oxidation rate (dt(ox)/dt) was determined at an immersion time of 6 seconds and it was found that the initial oxidation rate is linear with [O-3] for both pH-values. This indicates that initially the reaction is surface-controlled.

引用

页码：81 / 84

页数：4