Experimental evidence for the flatband voltage shift of high-k metal-oxide-semiconductor devices due to the dipole formation at the high-k/SiO2 interface

被引：143

作者：

Iwamoto, Kunihiko ^{[1
]}

Kamimuta, Yuuichi ^{[1
]}

Ogawa, Arito ^{[1
]}

Watanabe, Yukimune ^{[1
]}

Migita, Shinji ^{[2
]}

Mizubayashi, Wataru ^{[2
]}

Morita, Yukinori ^{[2
]}

Takahashi, Masashi ^{[1
]}

Ota, Hiroyuki ^{[2
]}

Nabatame, Toshihide ^{[1
]}

Toriumi, Akira ^{[2
,3
]}

机构：

[1] Assoc Super Adv Elect Technol, MIRAI, Tsukuba, Ibaraki 3058569, Japan

[2] Natl Inst Adv Ind Sci & Technol, ASRC, MIRAI, Tsukuba, Ibaraki 3058569, Japan

[3] Univ Tokyo, Sch Engn, Dept Mat Engn, Bunkyo Ku, Tokyo 1138656, Japan

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 13期

关键词：

D O I：

10.1063/1.2904650

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have examined an origin of the flatband voltage (V-FB) shift in metal-oxide-semiconductor capacitors by employing bilayer high-k gate dielectrics consisting of HfO2 and Al2O3 on the interfacial SiO2 layer. We found that the high-k/SiO2 interface affects the V-FB shift through an electrical dipole layer formation at its interface, regardless of the gate electrode materials. Furthermore, we demonstrated that the V-FB shift in the metal/high-k gate stack is determined only by the dipole at high-k/SiO2 interface, while for the Si-based gate it is determined by both gate/high-k and high-k/SiO2 interfaces.

引用

页数：3

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