Ion-assisted nucleation and growth of GaN on sapphire(0001)

被引：24

作者：

Headrick, RL ^{[1
]}

Kycia, S

Woll, AR

Brock, JD

Murty, MVR

机构：

[1] Cornell Univ, Cornell High Energy Synchrotron Source, Ithaca, NY 14853 USA

[2] Cornell Univ, Sch Appl & Engn Phys, Ithaca, NY 14853 USA

[3] Cornell Univ, Atom & Solid State Phys Lab, Ithaca, NY 14853 USA

来源：

PHYSICAL REVIEW B | 1998年 / 58卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.58.4818

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have performed a real-time x-ray scattering study of the nucleation of GaN on sapphire(0001) by gas-source molecular-beam epitaxy. GaN growth using thermal ammonia and Ga(C2H5)(3) exhibited a rapidly decaying intensity at the 0001 reflection, characteristic of three-dimensional cluster growth. Growth with 30-eV NHx+ ions and Ga(C2H5)(3) exhibited layer-by-layer intensity oscillations with maxima near odd-integer bilayers. The mode of nucleation is controlled by the Ga incorporation efficiency on the substrate and GaN islands. The Ga incorporation efficiency on the substrate is increased by a factor of 4 by low-energy ion irradiation during growth.

引用

页码：4818 / 4824

页数：7

共 44 条

[1] Effects of crystalline microstructure on epitaxial growth [J].

Amar, JG ;

Family, F .

PHYSICAL REVIEW B, 1996, 54 (20) :14742-14753

[2] TRANSITION TO MULTILAYER KINETIC ROUGHENING FOR METAL (100) HOMOEPITAXY [J].

BARTELT, MC ;

EVANS, JW .

PHYSICAL REVIEW LETTERS, 1995, 75 (23) :4250-4253

[3] EFFECT OF NUCLEATION MECHANISM ON PLANAR DEFECTS IN INAS ON SI (100) [J].

CHOI, CH ;

HULTMAN, L ;

AI, R ;

BARNETT, SA .

APPLIED PHYSICS LETTERS, 1990, 57 (27) :2931-2933

[4] NUCLEATION AND EPITAXIAL-GROWTH OF INAS ON SI (100) BY ION-ASSISTED DEPOSITION [J].

CHOI, CH ;

BARNETT, SA .

APPLIED PHYSICS LETTERS, 1989, 55 (22) :2319-2321

[5] SUPPRESSION OF 3-DIMENSIONAL ISLAND NUCLEATION DURING GAAS GROWTH ON SI(100) [J].

CHOI, CH ;

AI, R ;

BARNETT, SA .

PHYSICAL REVIEW LETTERS, 1991, 67 (20) :2826-2829

[6] SURFACTANTS IN EPITAXIAL-GROWTH [J].

COPEL, M ;

REUTER, MC ;

KAXIRAS, E ;

TROMP, RM .

PHYSICAL REVIEW LETTERS, 1989, 63 (06) :632-635

[7] INFLUENCE OF SURFACTANTS IN GE AND SI EPITAXY ON SI(001) [J].

COPEL, M ;

REUTER, MC ;

VONHOEGEN, MH ;

TROMP, RM .

PHYSICAL REVIEW B, 1990, 42 (18) :11682-11689

[8] Dislocation-free island formation in heteroepitaxial growth: A study at equilibrium [J].

Daruka, I ;

Barabasi, AL .

PHYSICAL REVIEW LETTERS, 1997, 79 (19) :3708-3711

[9] Stranski-Krastanov growth mode during the molecular beam epitaxy of highly strained GaN [J].

Daudin, B ;

Widmann, F ;

Feuillet, G ;

Samson, Y ;

Arlery, M ;

Rouviere, JL .

PHYSICAL REVIEW B, 1997, 56 (12) :R7069-R7072

[10] CRITICAL-EVALUATION OF THE STATUS OF THE AREAS FOR FUTURE-RESEARCH REGARDING THE WIDE BAND-GAP SEMICONDUCTORS DIAMOND, GALLIUM NITRIDE AND SILICON-CARBIDE [J].

DAVIS, RF ;

SITAR, Z ;

WILLIAMS, BE ;

KONG, HS ;

KIM, HJ ;

PALMOUR, JW ;

EDMOND, JA ;

RYU, J ;

GLASS, JT ;

CARTER, CH .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1988, 1 (01) :77-104

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