Chemically synthesized nanostructured VN for pseudocapacitor application

被引：78

作者：

Choi, DW ^{[1
]}

Kumta, PN ^{[1
]}

机构：

[1] Carnegie Mellon Univ, Dept Mat Sci & Engn, Pittsburgh, PA 15213 USA

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2005年 / 8卷 / 08期

关键词：

D O I：

10.1149/1.1951201

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The objective of the present study is to synthesize high purity vanadium nitride (VN) nanocrystallites using a two-step ammonolysis of vanadium tetrachloride. VN crystallites (< 10 nm) were obtained at relatively low temperatures (>= 400 degrees C) which exhibited a specific capacitance as high as 850 F/g by cyclic voltammetry. The electrochemical response of the nitride was evaluated at various scanning rates in 1 M KOH electrolyte. The nitride synthesized at different heat-treatment temperatures were further characterized by X-ray diffraction analysis, surface area analysis, and high-resolution transmission electron microscopy. (c) 2005 The Electrochemical Society.

引用

页码：A418 / A422

页数：5

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