Optimizing the Q value in three-dimensional metallic photonic band gap crystals

被引：11

作者：

Leung, WY ^{[1
]}

Tuttle, G

Sigalas, MM

Biswas, R

Ho, KM

Soukoulis, CM

机构：

[1] Iowa State Univ, Microelect Res Ctr, Ames, IA 50011 USA

[2] Iowa State Univ, Dept Phys & Astron, Ames, IA 50011 USA

[3] Iowa State Univ, Ames Lab, USDOE, Ames, IA 50011 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1998年 / 84卷 / 08期

关键词：

D O I：

10.1063/1.368623

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A metallic photonic band gap crystal with different defect structures is fabricated. The structure is designed and built to operate in the 8-26 GHz frequency range. Defects with sharp peaks in the transmission are created by removing portions of the metallic rods in a single defect layer. A high quality factor (Q) for the defect state is obtained by larger filling ratios and spatial separations between the unit cells. An optimized value of Q greater than or equal to 300 is found for three unit cell metallic photonic band gap structure. The experimental observations agree very well with theoretical calculations using the transfer matrix method. (C) 1998 American Institute of Physics. [S0021-8979(98)04320-5].

引用

页码：4091 / 4095

页数：5

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