Nebulized spray deposition of PLT thin film

被引:8
作者
Huang, CS [1 ]
Chen, JS [1 ]
Lee, CH [1 ]
机构
[1] Natl Cheng Kung Univ, Dept Mat Sci & Engn, Tainan 70101, Taiwan
关键词
D O I
10.1023/A:1004512627470
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Films of lead lanthanum titanate (PLT) are deposited on n-type (100) Si and Pt/TiO2/Ti/SiO2/(100)Si substrates by using ultrasonic nebulized spray deposition. In this work, Pb(CH3COO)(2). 3H(2)O, La(NO3)(3). 6H(2)O, Ti(i-C3H7O)(4) are used as reactants. Experimental results reveal that the films are transformed from tetragonal to nearly cubic as the lanthanum content increases. The refractive index and grain size decrease with the increase of La content in the films. From C-V and I-V measurements of the Al/PLT/n-Si (MIS) and Pt/PLT/Pt/TiO2/Ti/SiO2/n-Si (MIM) structures, the dielectric properties are determined. The permittivities are found to increase with the La content to a maximum value of about 275 and 530 for the MIS and MIM structures, respectively, and then decrease with further increase of La content for the films grown at 550 degrees C. The results of I-L! measurements indicate that the leakage currents of the MIS structure are higher than in the MIM structure. The P-E hysteresis loop became slimmer with the increase of La concentration due to lower tetragonality (c/a), and when the La content is higher than 20 mol%, the films behave like a normal dielectric. (C) 1999 Kluwer Academic Publishers.
引用
收藏
页码:727 / 733
页数:7
相关论文
共 32 条
[1]  
Beach DB, 1996, MATER RES SOC SYMP P, V415, P225
[2]   SOL-GEL DERIVED FERROELECTRIC PZT THIN-FILMS ON DOPED SILICON SUBSTRATES [J].
CHEN, CJ ;
WU, ET ;
XU, YH ;
CHEN, KC ;
MACKENZIE, JD .
FERROELECTRICS, 1990, 112 :321-327
[3]   CUBIC PARAELECTRIC (NONFERROELECTRIC) PEROVSKITE PLT THIN-FILMS WITH HIGH PERMITTIVITY FOR ULSI DRAMS AND DECOUPLING CAPACITORS [J].
DEY, SK ;
LEE, JJ .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (07) :1607-1613
[4]  
FENG ZC, 1995, MATER RES SOC SYMP P, V361, P331
[5]   PHYSICS OF FERROELECTRIC CERAMICS USED IN ELECTRONIC DEVICES [J].
HARDTL, KH .
FERROELECTRICS, 1976, 12 (1-4) :9-19
[6]   PREPARATION AND SWITCHING KINETICS OF PB(ZR, TI)O3 THIN-FILMS DEPOSITED BY REACTIVE SPUTTERING [J].
HASE, T ;
SHIOSAKI, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (9B) :2159-2162
[7]  
HENNINGS D, 1970, PHYS STATUS SOLIDI, V3, P456
[8]  
HORWITZ JS, 1991, APPL PHYS LETT, V58, P2910
[9]   PROPERTY MODIFICATION OF FERROELECTRIC PB(ZR,TI)O3 THIN-FILMS BY LOW-ENERGY OXYGEN ION-BOMBARDMENT DURING FILM GROWTH [J].
HU, H ;
KRUPANIDHI, SB .
APPLIED PHYSICS LETTERS, 1992, 61 (10) :1246-1248
[10]   Nebulized spray deposition of Pb(Zr, Ti)O-3 thin films [J].
Huang, CS ;
Tao, CS ;
Lee, CH .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1997, 144 (10) :3556-3561