Signal generation in CdZnTe strip detectors

被引:23
作者
Hamel, LA
Macri, JR
Doty, FP
机构
[1] UNIV NEW HAMPSHIRE,DURHAM,NH 03824
[2] NASA,GODDARD SPACE FLIGHT CTR,GREENBELT,MD 20771
[3] ORBITAL SCI CORP,GREENBELT,MD 20771
[4] DIGIRAD,SAN DIEGO,CA 92121
关键词
D O I
10.1109/23.507077
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The energy resolution of CdTe and CdZnTe detectors is usually limited by the poor transport properties of holes. Devices segmented into small pixels have been observed to exhibit improved energy resolutions. Simulations have shown that this small pixel effect is due to the fact that small pixels are mostly sensitive to carriers moving close to the pixel, within a distance of the order of the pixel size. In this paper, signals are calculated for CdZnTe strip detectors in order to determine to what extent a similar small electrode effect is produced by strips. The free carrier density distributions following the absorption of a gamma-ray are calculated by solving the continuity equations. Combined with the strip weighting field, this provides the signal induced in the strip. Simulations are made for various detector geometries and for both the anode and cathode strips. Simulated signals are compared with actual signals measured on CdZnTe detectors.
引用
收藏
页码:1422 / 1426
页数:5
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